Data processor with built-in dram

ABSTRACT

The present invention may be introduced to an architecture such as a personal computer or an amusement equipment for realizing a high-speed graphic processing and provides an optimum arrangement along the flow of information in the case where a frame buffer, a command memory and an image processor are incorporated in one chip in order to improve the drawing performance of an image processing device. Thereby, unnecessary drawing-around of wiring is eliminated and it is possible to reduce the chip area. Further, since the wiring length is shortened, signal delay becomes small, thereby enabling a high-speed operation.

TECHNICAL FIELD

[0001] The present invention relates to a semiconductor integratedcircuit device, and more particularly to a semiconductor integratedcircuit device in which a data processing device for performing an imageprocessing and a memory device for storing image data or instructionsare incorporated.

BACKGROUND ART

[0002] In recent years, personal computers have pushed into the field ofwork stations with intent to realize alternate for large-size computersby the network configuration of work stations. Also, an architecture forrealizing a low-cost and high-speed graphic processing has recently beenneeded with the advance of home amusement equipments. In particular, amodified sprite processing for freely mapping source data of rectanglesforms the basis of a three-dimensional graphics processing and isexpected to have a drawing performance on the order of several tenthousands of polygons per second in order to realize more real display.

[0003] In order to improve the drawing performance of graphic LSI, alabor is taken for an improvement in the rate of data transfer betweenthe graphic LSI and a frame buffer. A method for improving the datatransfer rate includes (1) a method in which a high-speed interface isused and (2) a method in which a data bus width between the graphic LSIand the frame buffer is enlarged.

[0004] In the case of the method (1), the improvement in data transferrate is realized using a DRAM provided with a high-speed page mode or asynchronous DRAM. The method using the synchronous DRAM is disclosed byJP-A-7-160249.

[0005] In the case of the method (2), the improvement in data transferrate is realized by incorporating a frame buffer and a graphicscontroller in one chip with 128 bits or the like as the bit width of aninternal bus. An example having a DRAM and a graphics controllerincorporated in one chip is disclosed by “DEVELOPMENT OF GRAPHIC LSIHAVING FRAME BUFFER INCORPORATED THEREIN”, Nikkei Electronics, p. 17(Apr. 10, 1995) and “ONE-CHIP IMPLEMENTATION WITH LOGIC—DRAM FORMS COREOF SYSTEM”, Nikkei Microdevice, pp. 44-65 (March, 1996).

[0006] In the frame buffer incorporated graphic LSI disclosed by NikkeiElectronics, a portion of a 16-Mbit general purpose standard DRAMcorresponding to 9 Mbits is removed and thereinstead replaced by a logiccircuit including a controller. Regarding a DRAM incorporated graphiccontroller disclosed by Nikkei Microdevice, this reference has nospecific disclosure excepting that the DRAM is incorporated.

DISCLOSURE OF INVENTION

[0007] However, in the case where the general purpose standard DRAM orthe like is modified to incorporate the frame buffer in the graphic LSIas in the above-mentioned prior art, a restriction is imposed on thearrangement of a graphic controller since the mat construction of thememory, the input/output direction of data and so forth are determinedby the specification of the general purpose standard DRAM. Also,unnecessary drawing-around of wiring is caused in order to provide aninterface with the graphic controller.

[0008] Namely, in the case where the conventional general purposestandard DRAM or synchronous DRAM is incorporated as it is, it isdifficult to obtain the optimum chip size. Also, since the graphiccontroller is filled in a vacant space of the DRAM, it becomesimpossible to use a macro cell of the existing graphic controller as itis.

[0009] Further, the incorporation of the DRAM results in that a bus formaking an access by the graphic controller to the DRAM does not appearon the external side. Accordingly, it becomes impossible to employ theconventional test method. Namely, in the case of the conventionalseparate-chip construction in which a graphic controller and an imagememory such as a frame buffer are provided on separate chips, the directdetection from terminals of the image memory is possible upon physicalfault of the connection terminals of the graphic controller and theimage memories and even upon functional fault thereof. On the otherhand, in the case of a one-chip construction in which a graphiccontroller and a image memory are provided on one chip, it will beimpossible to directly monitor communication of information withterminals of the image memory.

[0010] An object of the present invention is to realize the optimumlayout of a semiconductor integrated circuit device in which an imagememory and an image processor are incorporated.

[0011] Another object of the present invention is to allow asemiconductor integrated circuit device with a logic and a memoryincorporated therein to use the conventional test method for test of thememory as it is.

[0012] A further object of the present invention is to realize anincorporated image memory having an increased memory address depth and acapacity which is large when seen from an image processor.

[0013] A furthermore object of the present invention is to facilitatethe control logic of a state machine of a logic of a semiconductorintegrated circuit device in which the logic and a memory areincorporated.

[0014] The summary of typical ones of inventions disclosed by thepresent application will be mentioned in the following.

[0015] A semiconductor integrated circuit device having an image memoryand an image processor incorporated therein is arranged along the flowof information.

[0016] Also, a semiconductor integrated circuit device is provided witha test bus for an incorporated memory to allow the output to theexterior. Further, the incorporated memory is provided with a normalport and a test port.

[0017] Also, each of image memories incorporated in a semiconductorintegrated circuit device is constructed by a plurality of identicalmemory modules each of which is allotted with the same row address.

[0018] Also, in the case where a logic incorporated in a semiconductorintegrated circuit device makes an access to a memory, the latency of amemory read operation and that of a memory write operation are madeequal to each other.

BRIEF DESCRIPTION OF DRAWINGS

[0019]FIG. 1 shows an example of a system which uses a semiconductorintegrated circuit device according to the present invention.

[0020]FIG. 2 shows a typical one of an image operation.

[0021]FIG. 3 shows a block diagram of an edge operating section of animage processor incorporated in a semiconductor integrated circuitdevice according to the present invention.

[0022]FIG. 4 shows a block diagram of a line operating section of theimage processor incorporated in the semiconductor integrated circuitdevice according to the present invention.

[0023]FIG. 5 shows a block diagram of a dot operating section of theimage processor incorporated in the semiconductor integrated circuitdevice according to the present invention.

[0024]FIG. 6 shows a connection relationship between the image processorand an image memory which are incorporated in the semiconductorintegrated circuit device according to the present invention.

[0025]FIG. 7 shows a basic timing chart for reading and writing for amemory module incorporated in the semiconductor integrated circuitdevice according to the present invention.

[0026]FIG. 8 shows a timing chart in the case where a change-overbetween row addresses of the memory module incorporated in thesemiconductor integrated circuit device according to the presentinvention is made.

[0027]FIG. 9 shows the case where there is generated a drawing whichextends over a plurality of banks.

[0028]FIG. 10 shows a four-stage pipe-line processing by the imageprocessor incorporated in the semiconductor integrated circuit deviceaccording to the present invention.

[0029]FIG. 11 shows a specific example of the memory module incorporatedin the semiconductor integrated circuit device according to the presentinvention.

[0030]FIG. 12 shows a schematic construction of a layout image of thesemiconductor integrated circuit device according to the presentinvention.

[0031]FIG. 13 shows an example of the layout of memory modulesincorporated in the semiconductor integrated circuit device according tothe present invention.

[0032]FIG. 14 shows another example of the layout of memory modulesincorporated in the semiconductor integrated circuit device according tothe present invention.

[0033]FIG. 15 shows a test mechanism of the semiconductor integratedcircuit device according to the present invention.

[0034]FIGS. 16a-16 c show a test function for the memory moduleincorporated in the semiconductor integrated circuit device according tothe present invention.

[0035]FIG. 17 shows an example of a change-over circuit of the memorymodule incorporated in the semiconductor integrated circuit deviceaccording to the present invention.

[0036]FIG. 18 shows the allotment of test control pins of thesemiconductor integrated circuit device according to the presentinvention.

[0037]FIG. 19 shows the input/output of each test terminal of thesemiconductor integrated circuit device according to the presentinvention at the time of logic test.

[0038]FIG. 20 shows a block diagram of the whole of the semiconductorintegrated circuit device according to the present invention.

[0039]FIGS. 21a, 21 b, 22 a, 22 b, 23 a and 23 b show input/output pinsof the semiconductor integrated circuit device according to the presentinvention.

BEST MODE FOR CARRYING OUT THE INVENTION

[0040] The present invention will be explained in accordance with theaccompanying drawings in order to make more detailed description of theinvention.

[0041]FIG. 1 shows an example of a system which uses a semiconductorintegrated circuit device according to an embodiment the presentinvention. The system shown in FIG. 1 forms a part of a data processingsystem such as a personal computer or an amusement equipment.

[0042] A semiconductor integrated circuit device SIC is composed of animage processor GP, a command/source data image memory (hereinafterreferred to as command memory) VRAM and drawing/display memories(hereinafter referred to as drawing memories) FB0 and FB1. Thesemi-conductor integrated circuit device SIC is formed on onesemiconductor substrate such as a silicon substrate and is resin-sealed(or sealed in a plastic package). The semiconductor integrated circuitdevice SIC is connected to a central processing unit CPU and a CRTcontrol circuit DP.

[0043] The central processing unit CPU makes an access to the imageprocessor GP through a bus control circuit BC1. In the image processorGP, an output from the bus control circuit BC1 divides through the CPUinterface unit CIU into a bus BUS1 which makes an access to the drawingcommand fetch section DCF and a bus BUS2 which makes an access to thecommand memory VRAM.

[0044] In the case where an access is made to the drawing command fetchsection DCF from the CPU interface unit CIU, a command and input data tobe processed are read from the command memory VRAM and are then suppliedto the drawing controller DM, performing image data operation, such asthe edge operating section EDGE, the line operating section LINE, thedot operating section DOT and so forth.

[0045] More particularly, the drawing command fetch section DCF issuesan execution start command to fetch a command from the command memoryVRAM, transfers necessary parameters to the edge operating section EDGE,the line operating section LINE and the dot operating section DOT, andactivates the edge operating section EDGE. The edge operating sectionEDGE calculates an input data storing coordinate (or a coordinate atwhich the input data is stored) and a drawing coordinate in units of oneend point and activates the line operating section LINE. The lineoperating section LINE operates an input data storing coordinate and adrawing coordinate in units of one dot and instructs the dot operatingsection DOT to perform the processing of data. The dot operating sectionDOT takes the input data out of the command memory VRAM to process thedata. After the processing of the data, the dot operating section DOTperforms the drawing into either the drawing memory FB0 or the drawingmemory FB1 through the bus controller BC3 and the change-over switch SW.Which one of the drawing memories FB0 and FB1 is the drawing startedfrom, is determined in accordance with a state after resetting.

[0046] One of the drawing memories FB0 and FB1 being not subjected todrawing is subjected to a read processing by the display controller DISPthrough the bus controller BC4 and the change-over switch SW. Thedisplay controller DP transfers the read data to the display processorDP through a display output bus BUS3. The display processor DP convertsthe display data into a video signal and sends the video signal to adisplay device CRT.

[0047] The case where the command memory VRAM is accessed from the CPUinterface unit CIU includes the case of the testing of the imageprocessor GP. In this case, an external data processing device such as alogic tester stores a test command into the command memory VRAM throughthe CPU interface unit CIU. The testing of the image processor GP isperformed in such a manner that the image processor GP executes thestored test command on the basis of an instruction from the externaldata processing device.

[0048] The command memory VRAM is constructed by a 4−M(M=1048576)bitdynamic RAM (Random Access Memory hereinafter referred to as DRAM). Eachof the image memories FB0 and FB1 is constructed by a 2-Mbit DRAM.

[0049] Before the detailed explanation of the image processor GP,description will be made of an image processing. In order to realize animage processing which copes with three dimensions, an image patterncalled a texture mapping is put on the surface of an object. Thisrequires a function of mapping a rectangular source pattern to adestination pattern shown by four arbitrary points. This function iscalled a modified sprite processing. With the incorporation of apredetermined number of small-area image patterns in an image processingdevice, the patterns are moved on a background image at a high speed. Byperforming this modified sprite processing, a perspective representationbecomes possible so that more real display can be realized.

[0050] In mapping the rectangular source pattern to the destinationpattern shown by four arbitrary points, it is necessary to perform animage operation including the enlargement, reduction and rotation of theoriginal picture image. A typical one of the image operation is shown inFIG. 2. FIG. 2(a) represents a function of mapping a rectangular sourceimage ABCD to an arbitrary rectangle A′B′C′D′.

[0051] The image processor GP uses a system in which this mapping isrealized by performing line copy plural times. The line copy correspondsto an image operation in which a row of horizontal dots P0(Xp0, Yp0) toP1(Xp1, Yp1) of the source image are mapped to an arbitrary line fromQ0(Xq0, Yq0) to Q1(Xq1, Yq1) on a destination space, as shown in FIG.2(b). The image processor GP performs an edge operation of determiningthe start and end points Q0 and Q1 of the line copy and a line operationof determining a line which connects the start point Q0 and the endpoint Q1. The image processor GP can perform the modified spriteprocessing at the highest 29 Mdots/sec in accordance with a macrocommand from the external data processing device.

[0052]FIG. 3 shows a detailed block diagram of the edge operatingsection EDGE. The edge operating section EDGE is composed of two 13-bitarithmetic units AUa and AUb each having dedicated read and write buses,13-bit registers (R1-Rn) common to the two arithmetic units AUa and AUb,13-bit registers (Ra1-Ran, Rb1-Rbn) for the exclusive use of the twoarithmetic units AUa and AUb, an address decoder 121 for selecting theregisters (R1-Rn, Ra1-Ran, Rb1-Rbn), and an edge operating sectionsequencer 122 for controlling the arithmetic units AUa and AUb and soforth.

[0053] The edge operating section EDGE is a module which executes anedge drawing algorithm. Also, the edge operating section EDGE fetches adrawing command, drawing source data and drawing parameters from thecommand memory VRAM. The fetched command and parameters are stored intointernal registers provided in the edge operating section EDGE and thedot operating section DOT. The edge operating section EDGE performs anedge operation in accordance with the fetched drawing command anddrawing parameters and stores the result of edge operation an internalregister provided in the line operating section LINE.

[0054]FIG. 4 shows a detailed block diagram of the line operatingsection LINE. The line operating section LINE is composed of five DDA(Digital Differential Analyzer) arithmetic units (S-DDA, D-DDA, R-DDA,G-DDA, B-DDA) for performing a DDA operation (an operation of mainlyperforming subtraction) in one cycle, a 13-bit register group 132, anaddress decoder 131 for selecting the register group 132, and so forth.

[0055] The line operating section LINE is a module which executes a linedrawing algorithm. The line operating section LINE performs a lineoperation in accordance with the result of edge operation stored by theedge operating section EDGE. Parameters of the start and end points of aline copy received from the edge operating section EDGE are stored inthe register group 132 incorporated in the line operating section LINE.The line operating section LINE performs the Line operation on the basisof the stored parameters.

[0056]FIG. 5 shows a detailed block diagram of the dot operating sectionDOT. The dot operating section DOT is composed of a source memoryaddress counter S-Counter, a destination memory address counterD-Counter, three 5-bit counters R-Counter, G-Counter and B-Countercorresponding to red, green and blue, three 5-bit arithmetic units R-AU,G-AU and B-AU each having dedicated read and write buses, and so forth.

[0057] Each of the source memory address counter S-Counter and thedestination memory address counter D-Counter makes the count-up ofaddress when a carry is generated as the result of operation. Each ofthe three 5-bit counters R-Counter, G-Counter and B-Counter makes thecount-up of color data when a carry is generated as the result ofoperation. Each of the three 5-bit arithmetic units R-AU, G-AU and B-AUmakes the addition of source data red, green or blue and red, green orblue generated by the 5-bit counter R-Counter, G-Counter or B-Counter.

[0058] The dot operating section DOT is a module which executes a dotcopy algorithm. The dot operating section DOT performs an addressoperation and a dot operation of data for the drawing memory inaccordance with the result of line operation. The dot operating sectionDOT performs an access to the command memory VRAM for reading of sourcedata, the dot operation and an access to the drawing memory FB0 or FB1for writing of the result of dot operation. The dot operation is anoperation of determining a source coordinate P of a certain dot on aline copy, a destination coordinate Q thereof and color data (R, G, B)of the destination coordinate Q and is determined by an increment froman initial value.

[0059] The display controller DISP reads display data from the drawingmemory FB0 or FB1 and sends the read display data to the displayprocessor DP. In the display controller DISP is incorporated a refreshcircuit for refreshing the command memory VRAM and the drawing memoriesFB0 and FB1. The refresh circuit refreshes the command memory VRAM andthe drawing memories FB0 and FB1 simultaneously. The refresh cycle isperformed in reference to the command memory VRAM.

[0060] Usually, in the case where a DRAM is externally mounted to theimage processor, the refresh circuit includes a register for refreshcycle in order to cope with various DRAM's. The CPU performs the writinginto the refresh cycle register in compliance with the specification ofa DRAM or the like, thereby determining a refresh cycle.

[0061] In the present embodiment, however, since the image processor GP,the command memory VRAM and the drawing memories FB0 and FB1 are formedon one semiconductor integrated circuit device, the number of refreshcycles and the number of clocks for the command memory VRAM and thedrawing memories FB0 and FB1 are known beforehand and can be fixed.

[0062] With this construction, clocks conformable to the command memoryVRAM are inputted from the display controller DISP to the command memoryVRAM and the drawing memory FB0 or FB1, thereby unifying the refreshcycle of the image processing device having a plurality of DRAM'smounted thereon. Also, the display controller DISP can know a flybackperiod of the display device CRT and therefore performs the refreshingof the DRAM by use of the flyback period.

[0063] In the present embodiment, the command memory VRAM uses a 4-MbitDRAM. Therefore, the drawing memories FB0 and FB1 using 2-Mbit DRAM'sare refreshed two times.

[0064]FIG. 6 shows a connection relationship of the image processor GPwith the command memory VRAM and the drawing memories FB0 and FB1.

[0065] The 4-Mbit DRAM of the command memory VRAM is formed using two2-Mbit DRAM modules of 8-bank construction. Also, each of the 2-MbitDRAM's of the drawing memories FB0 and FB1 is formed using two 1-MbitDRAM modules of 4-bank construction. Hereinafter, the DRAM module willalso be referred to as memory module.

[0066] Each bank of the command memory VRAM and the drawing memories FB0and FB1 forms a memory array which has 256 word lines and 1024 bit linepairs. A column selecting circuit selects 128 bit line pairs (8 rowaddresses AX and 3 column addresses AYi). Namely, the bank has a storagecapacity of 256 Kbits (K=1024). With the use of this construction, amemory module can be constructed in units of 256 Kbits by increasing anddecreasing the number of banks. This memory module is suitable for asemiconductor integrated circuit on which logics and memories aremounted together or in a mixed form, as in the present embodiment.

[0067] The selection of a bank in the memory module is made by a rowaddress Ri (i=number of banks) and a column address Ci. Also, a byteenable signal BE enables the input/output of 128-bit data at every ntimes (n=1 16) as large as 8 bits (or 1 byte).

[0068] The memory module is a so-called synchronous type DRAM in whichan address signal and a control signal are inputted in synchronism witha clock signal and data is also inputted in synchronism with the clocksignal. Accordingly, the memory module operates in accordance with aso-called command designated by the control signal and the addresssignal. Also, a row address and a column address are notmultiplex-inputted as in a general purpose standard DRAM.

[0069] Between the image processor GP and the command memory VRAM areconnected a 16-bit data bus DBUS16, a 11-bit address bus (A0-A10), andsignals which include 8-bit row bank address (R0-R7), 8-bit column bankaddress (C0-C7), row address control CR, column address control CC0,CC1, 16-bit byte enable BE, read/write RW, active control AC, clock CKand so forth.

[0070] Between the image processor GP and the drawing memories FB0 andFB1 are connected a 32-bit data bus DBUS32, a 11-bit address bus(A0-A10), and signals which include 4-bit bank address (R0-R3), rowaddress control CR, column address control CC0, CC1, 16-bit byte enableBE, read/write RW, active control AC, clock CK and so forth.

[0071]FIG. 7 shows the basic timing for reading and writing for thememory module. Namely, there is represented the basic timing whichconcerns a series of operations including the reading of source datafrom the command memory VRAM, the image conversion of the source data bythe image processor GP and the writing of the image converted data intothe drawing memory FB0 or FB1.

[0072] An address ADDRVRAM of the command memory VRAM and an addressADDRFB of the drawing memory FB0 or FB1 are generated by the imageprocessor GP and are then inputted to the command memory VRAM and thedrawing memory FB0 or FB1, respectively. Also, a control signalnecessary for the memory modules is generated by the image processor GPand is then inputted to the command memory VRAM and the drawing memoryFB0 or FB1. An active control AC, a row address control CR and a rowaddress AX are taken into the memory module upon falling of a clocksignal CK to activate a bank (T0). After two clocks, an address controlCC, read/write RW and a column address AYi are taken into the memorymodule upon falling of the clock signal CK (T2). After further twoclocks, data is read (T4).

[0073] Namely, source data (READ1) is read after four clocks subsequentto the taking of the row address AX into the command memory VRAM.Similarly, dot data (READ2) is read after four clocks subsequent to thetaking of the row address into the drawing memory FB.

[0074] In the image processor GP, the source data (READ1) read from thecommand memory VRAM and the dot data (READ2) read from the drawingmemory FB are latched by the bus controller BC2 (SETO) and syntheticdata (SET1) is generated by the dot operating section DOT.

[0075] Further, the image processor GP outputs an address and a controlsignal in order to write the synthetic data (SET1) into the drawingmemory FB0 or FB1. Address control CC, read/write RW and column addressAYi are taken into the memory module upon falling of the clock signal CK(T7). After two clocks, the writing of data (WRITE1) is performed (T9).Thereby, the synthetic data (SET1) is written into the drawing memoryFB.

[0076] In the present embodiment, the latency of reading from the memorymodule (or a time from the input of a read command until data can beread) is two clocks and the latency of writing into the memory module(or a time from the input of a write command until data is written) isone clock. Therefore, in the case of writing, the image processor GPinserts NOP for one cycle to match the write cycle and the read cyclewith each other. Thereby, it is possible to treat a read processing anda write processing in the state machine without discrimination and itbecomes unnecessary to consider the access combinations of read/write,write/read, read/read and write/write in the state machine. Thereby, itis also possible to reduce the number of logic gates of the imageprocessor.

[0077] In the case where a change-over between row addresses AX is made,it is necessary to reserve two clocks for a pre-charging time from thesupply of a row address AX until the issuance of a column address AYO,as shown in FIG. 8(a). Namely, the column address AYO is issued afterthree clocks subsequent to the supply of the row address AXO. In thecase where data in the same row address AXO is to be accessedsubsequently, it is possible to issue column addresses AY1 and AY2continuously. In the case where three dots extending over a plurality ofbanks are to be drawn, as shown in FIG. 9, it is necessary to reservetwo clocks as a pre-charging time from the supply of the row address AXOuntil the issuance of a column address AY3, it is necessary to reservetwo clocks as a pre-charging time from the supply of a row address AX2until the issuance of a column address AY4. Namely, it is not possibleto continue the issuance of column addresses and eleven clocks arerequired until the issuance of the third column address AY5, as shown inFIG. 8(b).

[0078] Thus, it is possible to continue the issuance of column addressesAY apparently by issuing a row address AX three clocks before achange-over between row addresses AX is made. In the present embodiment,this is realized by a 4-stage pipe-line processing as shown in FIG. 10.

[0079] First, for a bank B0, a change-over between row addresses AX isdetected at a first stage (B0:X−Y) so that a row address (B0:AX0) isissued (T0). In a second stage and a third stage, NOP is performed toensure a pre-charging time (T1, T2). At a fourth stage, a column address(B0:AY3) is issued (T3).

[0080] Next, for a bank B2, a change-over between row addresses AX isdetected at the first stage (B2:X−Y) so that a row address (B2:AX1) isissued (T1). In the second stage and the third stage, NOP is performedto ensure a pre-charging time (T2, T3). At the fourth stage, a columnaddress (B2:AY4) is issued (T4).

[0081] Next, for a bank B3, a change-over between row addresses AX isdetected at the first stage (B3:X−Y) so that a row address (B3:AX1) isissued (T2). In the second stage and the third stage, NOP is performedto ensure a pre-charging time (T3, T4). At the fourth stage, a columnaddress (B3:AY5) is issued (T5).

[0082] By thus performing the 4-stage pipe-line processing, the columnaddresses of the three banks can be issued continuously. Thereby, in ausual state of use, the performance is improved corresponding to theabsence of a wait caused by a mishit cycle.

[0083] The detection of change-over between row addresses AX can berealized by comparing a row address AX of the preceding cycle and a rowaddress AX of the present cycle by a comparator in the bus controllerBC2, BC3 or BC4.

[0084] The reason why two memory modules are used for each of thecommand memory VRAM and the image memories FB0 and FB1, is that the samerow address AX is inputted to the two memory modules simultaneously todouble the number of bits accessed by the same row address AX. Thisreason will be explained in the following.

[0085] In the memory module of the present embodiment, the number ofbits capable of being made active by the row address issuance performedonce is 1024 bits. In the case where data existing at the same rowaddress AX is to be accessed (hitting), a read command or write commandcan be issued immediately. However, in the case where an access is to bemade to data which do not exist at the same row address AX (mishitting),the read command or write command cannot be issued immediately in orderto ensure a pre-charging time.

[0086] If the same row address is allotted to the two memory modules andthe row address is inputted to those modules simultaneously, the rowaddress access performed once enables the activation of 2048 bits whichare two times as compared with the case where the row address isinputted to one module. In this case, column address control CC uses onecharacteristic of each memory module. In the present embodiment, twocolumn address controls CC0 and CC1 are used to select columns.

[0087] In the case of mishitting, the image processor GP takes threeclock cycles to make two banks of the two memory modules active. Namely,a plurality of banks are made active simultaneously, thereby reducingoverhead at the time of bank change-over.

[0088] In the case where four memory modules are used for each of thecommand memory VRAM and the image memories FB0 and FB1, the commandmemory uses a 1M memory module and each of the image memories FB0 andFB1 uses a 512K memory module. In this case, the row address accessperformed once enables the activation of 4096 bits which are four timesas compared with the case where the row address is inputted to onemodule.

[0089] If a row address AX is being hit in the memory module of thepresent embodiment, a read or write processing can be performedcontinuously by outputting only column addresses AY. However, when therow address AX is mishit, a row address is issued after pre-charging.Therefore, it is necessary to take a wait of several cycles for theissuance of a command. Accordingly, if a mishitting is generated at thetime of writing of destination data during a period of time when sourcedata is being read without mishitting, there results in the overflow andextinction of data. In the present embodiment, therefore, the mishittingat the time of writing is detected in advance to wait for data bycausing a mishitting operation even if the reading on the source dataside is not mishit. Inversely, if the reading on the source data side ismishit, the mishitting operation is also performed at the time ofwriting on the destination side.

[0090]FIG. 11 shows a specific construction of the memory module in thepresent embodiment. The memory module is composed of three kinds ofmodules including a bank module BANK, an amplifier module AMP and apower supply module PS. FIG. 11 shows the memory module in a formresembling to the actual layout.

[0091] The bank module BANK includes BANK-0 to BANK-n and is composed ofa plurality of submemory arrays SUBARY (BUBARY-00 to SUBARY-i7), a bankcontrol circuit BNKCNT-1 and a bank control circuit BNKCNT-2.

[0092] The submemory array SUBARY includes a plurality of pairs of bitlines B and /B, a plurality of word lines W, a plurality of memory cells(represented by circular symbol in the figure), a bit line pre-chargingcircuit PC for bringing the potential of the bit line into apredetermined level before reading from the memory cell, a senseamplifier SA for amplifying a signal from the memory cell, a Y selectingcircuit for selecting one of the plurality of pairs of bit lines B and/B, and global bit lines GBL and /GBL for connecting the selected bitlines B and /B to an amplifier module AMP. The submemory array SUBARY isa divisional unit of I/O line in the bank module BANK.

[0093] The bank control circuit BNKCNT-1 includes an X decoder XD forselecting the word line W, a Y decoder YD for selecting the bit lines Band /B, and so forth. Receiving a bank address and a control signalwhich will be mentioned later on, the bank control circuit BNKCNT-1automatically generates signals necessary for a series of memory cellread operations including the pre-charging of bit line, the selection ofword line, the activation of sense amplifier, and so forth. One wordline W is selected by the X decoder XD, and (8×i) pairs of (n×8 ×i)pairs of bit lines B and /B (n×8 in the present embodiment though thecase of n=2 is shown in FIG. 11 for restriction by the size of drawing)intersecting the selected word line W are selected by an output signalYSi of the Y decoder YD. The selected bit lines B and /B makes thedelivery and reception of data to and from the amplifier module AMPthrough the global bit lines GBL and /GBL arranged parallel to the bitlines B and /B.

[0094] The bank control circuit BNKCNT-2 includes a group of sensors fordetecting the reaching of a sense amplifier control signal to a certainlevel.

[0095] The amplifier module AMP is composed of a main control circuitMAINCNT for supplying a control signal, an address signal and so forthto the bank module BANK in synchronism with a clock signal, and a bytecontrol circuit BYTCNT for controlling the reading and writing of datafor the group of bank modules (BANK-0 to BANK-n). Through the amplifiermodule AMP, (8×i) data input/output lines DQ (DQ00,—, DQ07,—,—,DQ07,—,DQi7) from the exterior of the memory module are inputted to the memorycells. A byte control signal BEi is a signal for turning the datainput/output lines DQ on and off in units of one byte.

[0096] The power supply module PS is a module for generating variousvoltages and includes a VCH generating circuit VCHG for generating aword line voltage VCH (higher than a power supply voltage VCC) suppliedto the bank module BANK and necessary for a word line driving circuitWD, a bit line pre-charge voltage generating circuit HVCG for generatinga voltage HVC (equal to one half of the power supply voltage VCC)necessary for pre-charging the bit lines, an in-array substrate voltagegenerating circuit VBBG for generating an in-array substrate voltage (ora back bias voltage) VBB (lower than a power supply voltage VSS (orground potential)), and so forth.

[0097] The bank module BANK of the present embodiment includes 256 wordlines. One word line intersects (8×8 ×i) pairs of bit lines theone-eighth of which is selected to the Y decoder so that (8×i) pairs ofglobal lines are inputted and outputted. In the present embodiment, i is16 so that one bank module BANK has a capacity of 256 Kbits and isinputted and outputted with data with a 128 bit width. Namely, there isobtained a memory macro module the capacity of which is variable withthe size of 256 Kbit unit. The bank module BANK-n corresponds to one ofthe plurality of banks B0 to B7 shown in FIG. 6.

[0098] The schematic construction of the layout image of thesemiconductor integrated circuit SIC according to the present inventionis shown in FIG. 12. The semiconductor integrated circuit SIC has alaterally elongated form which has the command memory VRAM arranged onthe left side thereof and the drawing memories FB0 and FB1 arranged onthe right side thereof. The image processor GP is arranged between theleft and right sides.

[0099] An example of the layout of memory modules is shown in FIG. 13.The command memory VRAM has two mirror-symmetrically arranged 2-Mbitmemory modules so that an address bus, a data bus, a control signal andso forth are inputted and outputted from a space between the two memorymodules. Each of the drawing memories FB0 and FB1 has twomirror-symmetrically arranged 1-Mbit memory modules so that an addressbus, a data bus, a control signal and so forth are inputted andoutputted from a space between the two memory modules.

[0100] In the present embodiment, a bus width between the imageprocessor GP and the memory module is 16 bits or 32 bits or relativelysmall. Since the memory module has a 128-bit width at the largest, it ispossible to enlarge the bus width between the image processor GP and thememory module to 128 bits. In that case, the change of arrangement ofmemory modules as shown in FIG. 14 facilitates the provision of a datainput/output interface.

[0101] The command memory VRAM and the drawing memories FB0 and FB1 havethe same storage capacity and are different in the manner ofconstruction of memory modules but the power supply module and theamplifier module are small as compared with the bank module.Accordingly, the command memory VRAM and the drawing memories FB0 andFB1 can be provided substantially with the same form and the same area.Namely, though the command memory VRAM and the drawing memories FB0 andFB1 are shown in FIG. 13 to have different sizes, an actual differencein size therebetween is not so large.

[0102] According to the present embodiment, the exchange of informationis made along a flow from the command memory VRAM to the drawing commandfetch section DCF, the edge operating section EDGE, the line operatingsection LINE, the dot operating section DOT, the drawing memories FB0and FB1, the display controller DISP, the drawing memories FB0 and FB1,and the display controller DISP. Namely, information flows from the leftof FIG. 12 to the right thereof. Therefore, the drawing-around of wiringbecomes simple and the length of wiring becomes short. Also, the wiringarea is reduced, thereby reducing the chip area. Further, since thewiring length becomes short, signal delay becomes small thereby enablinga high-speed operation.

[0103]FIG. 15 shows a block diagram of the interior of the semiconductorintegrated circuit device SIC of the present invention concerning a testmechanism.

[0104] The semiconductor integrated circuit device SIC is provided witha normal bus NB connected to the image processor GP and used at the timeof normal operation, a normal terminal NT connected to the normal busNB, a common test bus TB connected to the image processor GP, thecommand memory VRAM and the drawing memories FB0 and FB1 and used at thetime of test operation, a test terminal TT connected to the common testbus TB, and a mode selecting terminal MST for controlling modesincluding a normal mode, a test mode and so forth. Module selectingsignals TEMO˜5 are signals outputted from the mode selecting terminalMST for selecting memory modules to be tested. Also, internal buses IB0,IB1 and IB2 are internal buses which are not connected to the exteriorand are used at the time of normal operation.

[0105] In the present embodiment, the test of the memory modules of thecommand memory VRAM and the drawing memories FB0 and FBI and the test ofthe drawing processor GP are performed in independent forms. The test ofthe memory modules is conducted by a memory tester, and the test of thedrawing processor GP is conducted by a logic tester.

[0106] Also, the memory module in the present embodiment is providedwith a normal port NP used at the time of normal operation and a testport TP used at the time of test operation. This construction is usedfor lightening the load of the port to the minimum at the time of normaloperation since control logics such as a memory control are connected tothe normal port NP side through the internal buses IB0, IB1 and IB2.However, it is not necessarily required that the normal port and thetest port should be provided separately. The normal port and the testport can be constructed with one port by employing a construction suchas multiplex.

[0107] The test of each module is performed by selecting the imageprocessor GP and the memory modules of the command memory VRAM and thedrawing memories FB0 and FB1 are respectively selected by moduleselecting signals TEMO˜5 and a mode selecting signal TL which areinternal control signals outputted from the mode selecting terminal MST.Input signals TEO˜3 of the mode selecting terminal MST are supplied froman external test device (or tester) or an external CPU. Accordingly, theinput signals TEO˜3 from the exterior generate the module selectingsignals TEMO˜5 and the mode selecting signal TL internally through themode selecting terminal MST and the generated signals are inputted tothe respective modules so that the testing is conducted for each module.

[0108] Also, each memory module and the common test bus TB are connectedin a wired OR manner so that only the output of a memory module selectedby the module selecting signal TEMO˜5 is outputted to the common testbus TB.

[0109] Thereby, the number of wirings for testing can be reduced and thechip area of the semiconductor integrated circuit device SIC can bereduced.

[0110] A specific construction of the normal port NT and the test portTP provided in the memory module of the command memory VRAM and thedrawing memories FB0 and FB1 is shown in FIG. 16. The normal port NT andthe test port TP are constructed so that they perform operations whichare different for a normal operation mode and test modes, respectively.

[0111]FIG. 16a shows the case of the normal operation mode in which thesemiconductor integrated circuit device SIC is performing a normaloperation. In the normal operation mode, the memory module is accessedfrom the normal port NP by the image processor GP. At this time, thetest port TP side is brought into a high-impedance condition on thebasis of a selecting signal so that no information is outputted to theexterior. Namely, at the time of normal operation mode, the operation isperformed in a state in which the image processor GP and the memorymodule are directly coupled to each other. The selecting signal isgenerated by an AND logic of the module selecting signal TEMO˜5 and theinternal control signal TL.

[0112]FIG. 16b shows the case of a memory test mode. In the memory testmode, the memory module is accessed from the test port TP. At this time,the normal port NP side is brought into a high-impedance condition onthe basis of a selecting signal so that no information is outputted tothe exterior. Namely, at the time of memory test mode, the operation isperformed in a state in which the image processor GP and the memorymodule are disconnected and the memory module is directly coupled to theexternal test device or the external CPU through the test port TP.

[0113] Thereby, the conventional test method for semiconductor memoriessuch as general purpose DRAM's can be used for the memory modulesmounted on the semiconductor integrated circuit device SIC as it is.

[0114]FIG. 16c shows the case of a logic test mode. The logic test modemeans a test mode for the image processor GP. In the logic test mode,the memory module is accessed from the normal port NP. Also, theexternal monitoring through the test port TP is possible.

[0115] Namely, at the time of logic test mode, the operation isperformed in a state in which the image processor GP and the memorymodule are directly coupled to each other and the memory module isdirectly coupled to the external test device or the external CPU throughthe test port TP. Thereby, at the time of logic test mode, the imageprocessor GP communicates with the memory module in accordance with atest pattern of the logic tester whereas the condition of the memorymodule at that time can be monitored.

[0116]FIG. 17 shows an example of a circuit for change-over between thenormal port NP and the test port TP. The change-over circuit includes atransfer gate TG1 which is composed of an n-channel MOS (nMOS)transistor Q1 and a p-channel MOS (pMOS) transistor Q2 and a transfergate TG2 which is composed of an nMOS transistor Q3 and a pMOStransistor Q4. The transfer gates TG1 and TG2 are controlled by controlsignals SN and ST generated from the mode selecting signal TL and themodule selecting signals TEM0 to TEM5. A similar function can berealized using a clock inverter or the like in place of the transfergate.

[0117]FIG. 18 shows the allotment of test control pins of the modeselecting terminal MST. The test control pins (TE0 to TE3) receive a4-bit encoded signal so that the internal control signals TEM0˜5 and themode selecting signal TL are generated on the basis of the 4-bit encodedsignal, as shown in FIG. 18.

[0118] The memory modules of the command memory VRAM and the drawingmemories FB0 and FB1 are selected and tested on the basis of the moduleselecting signals TEMO ˜5 and the mode selecting signal TL.

[0119] The internal control signals TEM are the result of decoding of anexternal input signal supplied to the test control pins (TE0 to TE3) andare inputted to the respective modules of the image processor GP, thecommand memory VRAM and the drawing memories FB0 and FB1 to determine amodule to be tested. In the present embodiment, the signals will be“000000” at the time of normal mode operation and at the time of STNBYmode.

[0120] The mode selecting signal TL sets each of modes including anormal operation mode, a logic test mode and a memory test mode. In FIG.18, the normal operation mode and the logic test mode are set when themode selecting signal TL is “1”. The memory test mode is set when themode selecting signal TL is “0”. In the present embodiment, a stand-bymode can also be set in addition to the normal operation mode, the logictest mode and the memory test mode.

[0121] The test module in the present embodiment is such that the testis performed in units of two memory modules (M0-M1, M2-M3, M4-M5) andthe test in the memory test mode is performed in units of one memorymodule (M0, M1, M2, M3, M4, M5). This is based on a difference in testmethod between the logic test mode and the memory test mode. At the timeof logic test mode, the testing is conducted in units of one functionsuch as the drawing memory FB0 or the drawing memory FB1. At the time ofmemory test mode, on the other hand, the testing is conducted in unitsof one memory module.

[0122] With the above construction, there is no need to increase thenumber of test control pins (TE0 to TE3) even if the number of mountedmemory modules or banks is increased. Also, it becomes possible to testa module(s) corresponding to each test method.

[0123] It is not necessarily required that the test control pins (TE0 toTE3) should be encoded as in the present embodiment. There may beemployed a construction in which each test control pin selects aspecified memory module directly. For example, there may be constructedsuch that if TE2 turns into “1”, one memory module of the drawing memoryFB0 is selected and tested.

[0124]FIG. 19 shows the input/output of each terminal at the time oflogic test mode shown in FIG. 16(a).

[0125] In the present embodiment, therefore, a state directly coupled tothe external test device or the external CPU is established through thetest port NP shown in FIG. 16 and the testing can be conducted for theimage processor GP and each memory module accessed by the imageprocessor GP, as shown in FIG. 19.

[0126] The testing of the image processor GP in the present embodimentis conducted in a manner that the image processor GP executes a commandand a test pattern for testing inputted from the exterior from thenormal terminal NT. Accordingly, the image processor GP can use thenormal terminal NT to perform a normal operation on the basis of thetest pattern. This is not different from the operation at the time ofnormal operation.

[0127] More particularly, the testing of the image processor GP isconducted in such a manner that an external data processing devicestores the command and the test pattern for testing into the commandmemory VRAM through the above-mentioned CPU interface unit CIU and theimage processor GP executes that command on the basis of an instructionfrom the external data processing device.

[0128] In the present embodiment, the image processor GP executes thetest pattern for each memory module to be tested. Accordingly, thedrawing memory FB0 is first made the object of logic test mode and thedrawing memory FB1 and the command memory VRAM are subsequently made theobjects of logic test mode. Which one of the memory modules should beobserved in the logic test mode is determined by the observationchange-over signals KS which are the result of decoding of externalinput signals inputted to the test control pins (TE0˜TE3). In thepresent embodiment, there are a mode 1 in which the drawing memory FB0is observed, a mode 2 in which the drawing memory FB1 is observed and amode 3 in which the command memory VRAM is observed.

[0129] With this construction, a state in which the drawing memory FB0is being accessed from the normal port NP, a state in which the drawingmemory FB1 is being accessed and a state in which the command memoryVRAM is being accessed, can be monitored at the time of mode 1, at thetime of mode 2 and at the time of mode 3, respectively, from theexterior through the test port TP shown in FIG. 16c.

[0130]FIG. 20 shows a block diagram of the whole of the semiconductorintegrated circuit device SIC with a view to test, and FIGS. 21 to 23show a summarized form of the contents of input/output pins of thesemiconductor integrated circuit device SIC.

[0131] Each memory module is connected to the common test bus TB. Thecommon test bus TB is composed of a 11-bit address bus A, a 8-bit columnaddress bus C, a 8-bit row address bus R, a 16-bit memory byte enablesignal BE, a 16-bit data bus DQ, clock CLK, active control AC, rowaddress control CR, column address control CC, read/write RW, and soforth.

[0132] The semiconductor integrated circuit device SIC has 100 input,output and input/output terminals in total, that is, 34 input, outputand input/output terminals necessary for the image processor GP at thetime of normal operation, 7 terminals for test control, 43 terminals forthe exclusive use for testing, and 16 power supply/ground terminals. Asshown in FIG. 12, twenty five terminals are arranged for each side.

[0133] Each of an address/data bus VBUS, a memory byte enable TEBE and amemory bank address TERC is multiplexed in order to reduce the number ofpins. For example, the address/data bus VBUS performs as an address/databus the reading/writing for the image processor GP from the externaldata processing device at the time of normal operation on one hand andis connected to the data bus DQ of the test bus TB at the time of memorytest mode on the other hand to effect the input/output of the contentsof the data bus DQ of the test bus TB.

[0134] Effects obtained by the present embodiment can be explainedbriefly as follows.

[0135] (1) According to the present embodiment, the optimum arrangementalong the flow of information is provided in the case where a framebuffer, a command memory and an image processor are incorporated in onechip. Thereby, the drawing-around of wiring is simplified and the wiringlength can be shortened. As a result, the wiring area is reduced,thereby making it possible to reduce the chip area. Further, since thewiring length is shortened, signal delay becomes small, thereby enablinga high-speed operation.

[0136] (2) With a construction in which an image processing devicehaving a frame buffer, a command memory and an image processorincorporated in one chip is provided with a test terminal and eachmemory module is provided with a test port connected to a test bus, itis possible to monitor the content of each incorporated memory modulefrom the exterior at the time of test. Accordingly, even if externalterminals for memories are removed due to mixed mounting, theconventional test method can be used as it is.

[0137] (3) With a construction in which each of the frame buffer and thecommand memory incorporated in the image processing device is formed bya plurality of memory modules having the same construction and the samerow address is allotted to each memory module, it is possible toincrease the memory address depth. Thereby, even in the case where thecurrent line or current capacity of the memory module is limited due tophysical restrictions such as stress, torsion and so forth, a framebuffer and a command memory each having a large capacity when seen fromthe image processor can be realized by the plural and same constructionin a range in which the upper limit is satisfied. Further, theconstruction of the frame buffer and the command memory by memorymodules having the same construction enables the unification of testingand/or refreshing in each of the frame buffer and the command memory.

[0138] (4) With a construction in which the latencies of reading andwriting operations for each of the frame buffer and the command memorybased on an instruction from the image processor are made equal to eachother, it is possible to facilitate the control logic of a state machineof a logic. Namely, the image processor makes the latencies of readingand writing operations equal to each other by executing a non-operationinstruction after the output of a write address. Thereby, it is possibleto handle a read processing and a write processing withoutdiscrimination in the state machine. Accordingly, there is no need toconsider the access combinations of read/write, write/read, read/readand write/write in the state machine. Also, it is possible to reduce thenumber of logic gates of the image processor.

INDUSTRIAL APPLICABILITY

[0139] The present invention can be introduced to an architecture suchas a personal computer or an amusement equipment for realizing ahigh-speed graphic processing. With a construction in which the optimumarrangement along the flow of information is provided in the case wherea frame buffer, a command memory and an image processor are incorporatedin one chip in order to improve the drawing performance of an imageprocessing device or with a construction in which the conventionalmemory test and logic test can be used as they are and each of a framebuffer and a command memory is formed by a plurality of memory moduleshaving the same construction, the present invention is suitable for thereduction of an occupied area on a substrate or the realization of animage processing device in which convenient use is possible.

1. A semiconductor integrated device comprising on one semiconductorsubstrate an image processor in which logic circuits are integrated, afirst dynamic RAM in which command and source data are stored and asecond dynamic RAM in which drawing information is stored, wherein saidfirst dynamic RAM and said second dynamic RAM are arranged at oppositeends of said image processor.
 2. A semiconductor integrated devicecomprising on one semiconductor substrate an image processor in whichlogic circuits are integrated, a first dynamic RAM in which command andsource data are stored and a second dynamic RAM in which drawinginformation is stored, wherein said image processor is arranged betweensaid first dynamic RAM and said second dynamic RAM.
 3. A semiconductorintegrated device comprising on one semiconductor substrate an imageprocessor in which logic circuits are integrated, a first dynamic RAM inwhich command and source data are stored and a second dynamic RAM inwhich drawing information is stored, wherein said first dynamic RAM andsaid second dynamic RAM are arranged on short sides of saidsemiconductor substrate, respectively.
 4. A semiconductor integrateddevice according to claim 1, wherein each of the plurality of dynamicRAMS forming said first and second dynamic RAMS is composed of aplurality of banks, and a number of bits of data lines made active bysame address is the same for said first dynamic RAM and said seconddynamic RAM.
 5. A semiconductor integrated device according to claim 1,wherein said second dynamic RAM includes two dynamic RAMs one of whichis used as a memory for drawing by said image processor and the other ofwhich is used as a memory for display by said image processor, thedrawing RAM and the display RAM being changed over alternately.
 6. Asemiconductor integrated device according to claim 1, wherein imageinformation to be written is transferred from said first dynamic RAM tosaid second dynamic RAM through said image processor, and the imageinformation written in said second dynamic RAM is outputted to theexterior through said image processor.
 7. A semiconductor integrateddevice according to claim 1, wherein said image processor includes: adrawing command fetch section for fetching command from said firstdynamic RAM and outputting an edge operation start signal aftercompletion of fetching; an edge operating section for performing anoperation of coordinates of a start point and an end point afterconversion when an original picture to be converted is divided intopredetermined lines; a line operating section for performing anoperation of filling up a space between said start and end points of theline into a straight line and addressing it; a dot operating section fortaking in dot data from said first dynamic RAM and starting a memoryaccess to said second dynamic RAM to write a drawing address and the dotdata therein; and a display controller for outputting display data ofsaid second dynamic RAM to the exterior.
 8. A semiconductor integrateddevice according to claim 7, wherein said drawing command fetch sectionfetches a command from said first dynamic RAM by a drawing start signalinputted from an external data processing device and outputs an edgeoperation start signal to said edge operating section after completionof fetching, said edge operating section receives said edge operationstart signal to start an edge operation and outputs a line operationstart signal to said line operating section after completion of edgeoperation while setting the result of edge operation to said lineoperating section and starting a next edge operation, said lineoperating section receives said line operation start signal to start aline operation and outputs a memory access start signal to said dotoperating section after completion of line operation while setting theresult of line operation to said dot operating section, said dotoperating section receives said memory access start signal to fetch dotdata from said first dynamic RAM and starts a memory access to saidsecond dynamic RAM to write attribute data and the dot data therein, andsaid display controller outputs display data of said second dynamic RAMto the exterior.
 9. A semiconductor integrated device according to claim7, wherein said second dynamic RAM is written with the drawing addressand the dot data from said dot operating section and outputs the drawnimage information to the exterior through said display controller.
 10. Asemiconductor integrated device according to claim 1, wherein said imageprocessor fetches a command from said first dynamic RAM in accordancewith a drawing instruction inputted from an external processing device,performs an image operation after completion of fetching, draws a resultof image operation into said second dynamic RAM and outputs the drawndata to the exterior.
 11. A semiconductor integrated device according toclaim 2, wherein each of the plurality of dynamic RAMs forming saidfirst and second dynamic RAMs is composed of a plurality of banks, andthe number of bits of data lines made active by same address is the samefor said first dynamic RAM and said second dynamic RAM.
 12. Asemiconductor integrated device according to claim 3, wherein each ofthe plurality of dynamic RAMs forming said first and second dynamic RAMsis composed of a plurality of banks, and the number of bits of datalines made active by same address is the same for said first dynamic RAMand said second dynamic RAM.